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Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . ..
CORPORATION
• High Input Impedance
• Diode Protected Gate
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Stor.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N170 |
Calogic LLC |
N-Channel Enhancement Mode MOSFET Switch |
|
| 2 | 3N170 |
Linear Technology |
N-CHANNEL MOSFET ENHANCEMENT MODE |
|
| 3 | 3N170 |
Motorola Semiconductor |
(3N169 - 3N171) MOSFETs Switching |
|
| 4 | 3N170 |
Micross |
High Speed Switch |
|
| 5 | 3N171 |
Linear Technology |
N-CHANNEL MOSFET ENHANCEMENT MODE |
|
| 6 | 3N171 |
Motorola Semiconductor |
(3N169 - 3N171) MOSFETs Switching |
|
| 7 | 3N171 |
Micross |
High Speed Switch |
|
| 8 | 3N173 |
Calogic LLC |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
|
| 9 | 3N100E |
Motorola |
MTB3N100E |
|
| 10 | 3N1012 |
Infineon |
Power-Transistor |
|
| 11 | 3N10L26 |
Infineon |
Power-Transistor |
|
| 12 | 3N120-E3 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|