N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below. 1. To av.
HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below. 1. To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used. 2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
TO-72
• Low Switching Voltages
• Fast Switching Times Drain-Source Resistance
• Low
• Low Re.
3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTA.
3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mos.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3N171 |
Linear Technology |
N-CHANNEL MOSFET ENHANCEMENT MODE | |
2 | 3N171 |
Motorola Semiconductor |
(3N169 - 3N171) MOSFETs Switching | |
3 | 3N171 |
Micross |
High Speed Switch | |
4 | 3N172 |
Calogic LLC |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch | |
5 | 3N173 |
Calogic LLC |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch | |
6 | 3N100E |
Motorola |
MTB3N100E | |
7 | 3N1012 |
Infineon |
Power-Transistor | |
8 | 3N10L26 |
Infineon |
Power-Transistor | |
9 | 3N120-E3 |
UTC |
1200V N-CHANNEL POWER MOSFET | |
10 | 3N124 |
ETC |
N-channel Transistor | |
11 | 3N125 |
ETC |
N-channel Transistor | |
12 | 3N126 |
ETC |
N-channel Transistor |