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2SC1417(3DG1417) NPN /SILICON NPN TRANSISTOR ：。/Purpose: High frequency amplifier. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 20 15 3.0 30 100 150 -55～150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO hFE VCE(sat) VBE fT Cob G.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG140 |
Qunli Electric |
NPN Silicon High FrequencyLow Power Transistor |
|
| 2 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 3 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 5 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 6 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 7 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 8 | 3DG111 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 9 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 10 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR |
|
| 11 | 3DG1213A |
LZG |
SILICON NPN TRANSISTOR |
|
| 12 | 3DG122 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|