3DD159B - INCHANGE

3DD159B NPN Transistor

·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.

Features

ARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 50V; IE= 0 hFE DC Current Gain IC= 2.5A; VCE= 5V MIN MAX UNIT 150 V 100 V 5 V 1.2 V 1.5 V 1 mA 15 120 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.