3DD159B INCHANGE NPN Transistor Datasheet, en stock, prix

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3DD159B

INCHANGE
3DD159B
3DD159B 3DD159B
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Part Number 3DD159B
Manufacturer INCHANGE
Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION...
Features ARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 50V; IE= 0 hFE DC Current Gain IC= 2.5A; VCE= 5V MIN MAX UNIT 150 V 100 V 5 V 1.2 V 1.5 V 1 mA 15 120 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification...

Document Datasheet 3DD159B Data Sheet
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