3DD155 - Inchange Semiconductor

3DD155 Silicon NPN Power Transistor

·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO VCE(sat) VBE(sat) ICEO ICBO hFE Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain IE= 1mA; IC= 0 IC= 1.0A; IB= 0.1A IC= 1.0A ;IB= 0.1A VCE=V(BR)CEO; IB=0 VCB= V(BR)CBO; IE=0 IC= 1A; VCE= 5V MIN MAX UNIT A 50 B 100 C 150 V D 200 E 250 F 300 A 80 B 150 C 200 V.