Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving ligh ·High frequency switching power supply ·High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VCEO Collecto.
Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A ICBO Collector Cutoff Current VCB= 700V; IE=0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE-1 DC Current Gain IC= 5A; VCE= 5V hFE-2 DC Current Gain IC= 8A; VCE= 5V 3DD13009N MIN TYP. MAX UNIT 400 V 1.5 V 1.6 V 0.1 mA 0.01 mA 8 40 8 isc Website：www.iscsemi.com 2 isc & iscsemi is.
3DD13009N - JILIN SINO-MICROELECTRONICS
of Changes ：201007A 7/7 Free Datasheet http://www.datasheet4u.com/ .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD13009 |
INCHANGE |
NPN Transistor |
|
| 2 | 3DD13009 |
LGE |
NPN Transistor |
|
| 3 | 3DD13009 |
ETC |
Silicon NPN Transistor |
|
| 4 | 3DD13009 |
Dayan Technology |
NPN Transistor |
|
| 5 | 3DD13009-A9 |
ETC |
Silicon NPN Transistor |
|
| 6 | 3DD13009A8 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 7 | 3DD13009A9 |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|
| 8 | 3DD13009AN |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 9 | 3DD13009B8 |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|
| 10 | 3DD13009C8 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 11 | 3DD13009E |
JILIN SINO |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 12 | 3DD13009E8 |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|