NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009E MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W (RoHS) APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier FcEircAuTit U.
Voltage Collector Current(DC) Collector Current(pulse) Base Current(DC) Base Current(pulse) TO-220C Total Dissipation TO-3PB Junction Temperature Storage Temperature 3DD13009E Symbol VCES VCEO VEBO IC ICP IB IBP PC PC Tj Tstg Value 700 400 9 12 24 6 12 100 120 150 -55~+150 Unit V V V A A A A W W ℃ ℃ :pulse5ms。 Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) Unit V(BR)CEO IC=10mA,IE=0 V(BR)CBO IC=1mA,IB=0 V(BR)EBO IE=1mA,IC=0 ICBO VCB=700V, IE=0 ICEO .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD13009 |
INCHANGE |
NPN Transistor | |
2 | 3DD13009 |
LGE |
NPN Transistor | |
3 | 3DD13009 |
ETC |
Silicon NPN Transistor | |
4 | 3DD13009 |
Dayan Technology |
NPN Transistor | |
5 | 3DD13009-A9 |
ETC |
Silicon NPN Transistor | |
6 | 3DD13009A8 |
Huajing Microelectronics |
Silicon NPN Transistor | |
7 | 3DD13009A9 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
8 | 3DD13009AN |
Huajing Microelectronics |
Silicon NPN Transistor | |
9 | 3DD13009B8 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
10 | 3DD13009C8 |
Huajing Microelectronics |
Silicon NPN Transistor | |
11 | 3DD13009E8 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
12 | 3DD13009F8 |
Huajing Microelectronics |
Silicon NPN bipolar transistor |