The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST.
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF200A/400A/800A
– 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 55 ns for SST39LF200A/400A/800A
– 70 ns for SST39VF200A/400A/800A
• Latched Address and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 39VF010 |
Silicon Storage Technology |
SST39VF010 | |
2 | 39VF020 |
Silicon Storage Technology |
SST39VF020 | |
3 | 39VF040 |
Silicon Storage Technology Inc |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
4 | 39VF080 |
SST |
SST39VF080 | |
5 | 39VF1601 |
SST |
SST39VF1601 | |
6 | 39VF1602 |
Silicon Storage Technology |
SST39VF1602 | |
7 | 39VF1681 |
Silicon Storage Technology |
SST39VF1681 | |
8 | 39VF3201 |
Silicon Storage Technology |
SST39VF3201 | |
9 | 39VF400A |
Silicon Storage Technology |
SST39VF400A | |
10 | 39VF512 |
Silicon Storage Technology |
SST39VF512 | |
11 | 39VF6401 |
Silicon Storage Technology |
SST39VF6401 | |
12 | 39VF800A |
Silicon Storage Technology |
SST39VF800A |