The SST39VF168x devices are 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF168x write (Program or Erase) with a 2.7-3.6V powe.
• Organized as 2M x8
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 64 KByte) for SST39VF1682
– Bottom Block-Protection (bottom 64 KByte) for SST39VF1681
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Block-Erase Capability
– Uniform 64 KByte blocks
• Chip-Er.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 39VF1601 |
SST |
SST39VF1601 | |
2 | 39VF1602 |
Silicon Storage Technology |
SST39VF1602 | |
3 | 39VF010 |
Silicon Storage Technology |
SST39VF010 | |
4 | 39VF020 |
Silicon Storage Technology |
SST39VF020 | |
5 | 39VF040 |
Silicon Storage Technology Inc |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
6 | 39VF080 |
SST |
SST39VF080 | |
7 | 39VF200A |
SST |
SST39VF200A | |
8 | 39VF3201 |
Silicon Storage Technology |
SST39VF3201 | |
9 | 39VF400A |
Silicon Storage Technology |
SST39VF400A | |
10 | 39VF512 |
Silicon Storage Technology |
SST39VF512 | |
11 | 39VF6401 |
Silicon Storage Technology |
SST39VF6401 | |
12 | 39VF800A |
Silicon Storage Technology |
SST39VF800A |