The SST39LF/VF080 devices are 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080 write (Program or Erase) with a 3.0-3.6V power sup.
• Organized as 1M x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF080
– 2.7-3.6V for SST39VF080
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz) www.DataSheet4U.com
– Active Current: 12 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Block-Erase Capability
– Uniform 64 KByte blocks
• Fast Read Access Time:
– 55 ns for SST39LF080
– 70 and 90 ns for SST39VF080
• Latched Address and Da.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 39VF010 |
Silicon Storage Technology |
SST39VF010 | |
2 | 39VF020 |
Silicon Storage Technology |
SST39VF020 | |
3 | 39VF040 |
Silicon Storage Technology Inc |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash | |
4 | 39VF1601 |
SST |
SST39VF1601 | |
5 | 39VF1602 |
Silicon Storage Technology |
SST39VF1602 | |
6 | 39VF1681 |
Silicon Storage Technology |
SST39VF1681 | |
7 | 39VF200A |
SST |
SST39VF200A | |
8 | 39VF3201 |
Silicon Storage Technology |
SST39VF3201 | |
9 | 39VF400A |
Silicon Storage Technology |
SST39VF400A | |
10 | 39VF512 |
Silicon Storage Technology |
SST39VF512 | |
11 | 39VF6401 |
Silicon Storage Technology |
SST39VF6401 | |
12 | 39VF800A |
Silicon Storage Technology |
SST39VF800A |