32NM50N - STMicroelectronics

32NM50N N-Channel MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 2 3 1 D²PAK TAB .

Features

Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N VDS RDS(on) max. 500 V 0.13 Ω ID PTOT 22 A 190 W 35 W 190 W 190 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Applications
■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.