3205TR - GFD

3205TR N-Channel MOSFETS

The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and oth.

Features

• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves Applications
• witching Application Systems
• Inverter systems
• DC Motor Control 3205TR VDS 55V RDS(ON) ID 6.6mΩ 108A Ordering Information PART NUMBER PACKAGE BRAND 3205TR TO-220 OGFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 3205TR Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Sym.