This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL320N4LF8 Product summary Order code STL320N4LF8 Marking(1) 320N4LF8 Package PowerFLAT 5x6 .
Order code STL320N4LF8
VDS 40 V
• MSL1 grade
• 175 °C operating temperature
• 100% avalanche tested
RDS(on) max. 0.8 mΩ
ID 360 A
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Product status link STL320N4LF8
Product summary
Order code
STL320N4LF8
Marking(1)
320N4LF8
Package
PowerFLAT 5x6
Packing
Tape and reel
1. For engineering samples ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 320N20N |
Infineon |
Power-Transistor | |
2 | 320NS |
Naina Semiconductor |
Standard Recovery Diodes | |
3 | 320NS10 |
Naina Semiconductor |
Standard Recovery Diodes | |
4 | 320NS100 |
Naina Semiconductor |
Standard Recovery Diodes | |
5 | 320NS120 |
Naina Semiconductor |
Standard Recovery Diodes | |
6 | 320NS140 |
Naina Semiconductor |
Standard Recovery Diodes | |
7 | 320NS160 |
Naina Semiconductor |
Standard Recovery Diodes | |
8 | 320NS20 |
Naina Semiconductor |
Standard Recovery Diodes | |
9 | 320NS40 |
Naina Semiconductor |
Standard Recovery Diodes | |
10 | 320NS60 |
Naina Semiconductor |
Standard Recovery Diodes | |
11 | 320NS80 |
Naina Semiconductor |
Standard Recovery Diodes | |
12 | 320NSR |
Naina Semiconductor |
Standard Recovery Diodes |