320N4LF8 |
Part Number | 320N4LF8 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge fo... |
Features |
Order code STL320N4LF8
VDS 40 V
• MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL320N4LF8 Product summary Order code STL320N4LF8 Marking(1) 320N4LF8 Package PowerFLAT 5x6 Packing Tape and reel 1. For engineering samples ma... |
Document |
320N4LF8 Data Sheet
PDF 612.44KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 320N20N |
Infineon |
Power-Transistor | |
2 | 320NS |
Naina Semiconductor |
Standard Recovery Diodes | |
3 | 320NS10 |
Naina Semiconductor |
Standard Recovery Diodes | |
4 | 320NS100 |
Naina Semiconductor |
Standard Recovery Diodes | |
5 | 320NS120 |
Naina Semiconductor |
Standard Recovery Diodes |