Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 32 320NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM It 2 Parameters Maximum avg. forward cur.
• Diffused Series
• Industrial grade
• Available in Normal and Reverse polarity
• Metric and UNF thread type
32 320NS(R)
Standard andard Recovery Diodes (Stud and Flat Base Type)
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol IF(AV) VFM IFSM IFRM It
2
Parameters Maximum avg. forward current @ TE O = 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum peak repetitive surge current 2 rep) for 5 to Maximum I t rating (non-rep) 10 msec
Values 320 1.4 6000 15000 180000
Units A V A A A sec
2
DO-205AB 205.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 320N20N |
Infineon |
Power-Transistor | |
2 | 320N4LF8 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | 320NS10 |
Naina Semiconductor |
Standard Recovery Diodes | |
4 | 320NS100 |
Naina Semiconductor |
Standard Recovery Diodes | |
5 | 320NS120 |
Naina Semiconductor |
Standard Recovery Diodes | |
6 | 320NS140 |
Naina Semiconductor |
Standard Recovery Diodes | |
7 | 320NS160 |
Naina Semiconductor |
Standard Recovery Diodes | |
8 | 320NS20 |
Naina Semiconductor |
Standard Recovery Diodes | |
9 | 320NS40 |
Naina Semiconductor |
Standard Recovery Diodes | |
10 | 320NS60 |
Naina Semiconductor |
Standard Recovery Diodes | |
11 | 320NS80 |
Naina Semiconductor |
Standard Recovery Diodes | |
12 | 320NSR |
Naina Semiconductor |
Standard Recovery Diodes |