FAST RECOVER DIODE R 30F60UA3 MAIN CHARACTERISTICS IF(AV) VRRM Tj(max) VF(typ) trr(typ) 15×2 A 600 V 175℃ 1.95V 28ns Package TO-3P(H)IS UPS PFC APPLICATIONS UPS Switch power supply PFC Inversion Welder IRM Qrr (RoHS) FEATURES Low Forward Voltage Low IRM and reverse recovery charge High reliability RoHS produc.
Low Forward Voltage
Low IRM and reverse recovery charge
High reliability
RoHS product
ORDER MESSAGE
Order codes
-
-
Halogen-Tube
Halogen Free-Tube
30F60UA3-GA-B
30F60UA3-GA-BR
Marking
30F60UA3
Package
TO-3P(H)IS
:202111A
1/6
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage Working Peak Reverse Voltage
Symbol
VRRM VRWM
TCB=100℃
Average Forward Rectified Curren
Per Package Per Diode
Non-Repetitive Surge Forward Current t=8.3ms
Avalanche Energy(per diode) L=40mH
Maximum operating junction temperature
Storage temperature ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30F60AB |
JILIN SINO |
FAST RECOVER DIODE | |
2 | 30F60AB3 |
JILIN SINO |
FAST RECOVER DIODE | |
3 | 30F60HF |
JILIN SINO |
FAST RECOVER DIODE | |
4 | 30F60W |
JILIN SINO |
FAST RECOVERY DIODE | |
5 | 30F-21 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
6 | 30F-22 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
7 | 30F-25 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
8 | 30F-26 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
9 | 30F120WT |
JILIN SINO |
FAST RECOVER DIODE | |
10 | 30F2010 |
Microchip Technology |
16-Bit Digital Signal Controllers | |
11 | 30F2011 |
Microchip Technology |
DSPIC30F2011 | |
12 | 30F40UW3 |
JILIN SINO |
FAST RECOVERY DIODE |