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FAST RECOVERY DIODE R 30F60HF MAIN CHARACTERISTICS IF(AV) VRRM VF(typ) trr（typ） 30A 600 V 2.0V 25ns Package TO-220HF-2L UPS APPLICATIONS Active power factor correction Switch power supply UPS Antiparalle Diode for high frequ ency switching devices FEATURES Ultrafast Recovery Time Low Forward Voltage Low Leakage Cur.
Ultrafast Recovery Time
Low Forward Voltage
Low Leakage Current
ORDER MESSAGE
Order codes
-
-
Halogen-Tube
Halogen Free-Tube
30F60HF-FL-B
30F60HF-FL-BR
：202302B
Marking
30F60HF
Package
TO-220HF-2L
1/5
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Repetitive peak reverse voltage
Average
forward
Current
T B
CB=100℃
Non-Repetitive Surge Forward Current t=8.3ms
Junction Temperature
30F60HF
Symbol
VRRM
Value
600
Unit
V
IF(AV)
30
A
IFSM
270
A
Tj
-40~+150
℃
Storage temperature range
TSTG
-40~+150
℃
Torque（to heatsink）
Torque
4.0-6.0
ELECTRICAL CH.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30F60AB |
JILIN SINO |
FAST RECOVER DIODE |
|
| 2 | 30F60AB3 |
JILIN SINO |
FAST RECOVER DIODE |
|
| 3 | 30F60UA3 |
JILIN SINO |
FAST RECOVER DIODE |
|
| 4 | 30F60W |
JILIN SINO |
FAST RECOVERY DIODE |
|
| 5 | 30F-21 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC |
|
| 6 | 30F-22 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC |
|
| 7 | 30F-25 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC |
|
| 8 | 30F-26 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC |
|
| 9 | 30F120WT |
JILIN SINO |
FAST RECOVER DIODE |
|
| 10 | 30F2010 |
Microchip Technology |
16-Bit Digital Signal Controllers |
|
| 11 | 30F2011 |
Microchip Technology |
DSPIC30F2011 |
|
| 12 | 30F40UW3 |
JILIN SINO |
FAST RECOVERY DIODE |
|