of Changes 20151030 205B 510C :201510C 5/5 .
z Low power loss, high efficiency zHigh reliability z RoHS product ORDER MESSAGE Order codes Marking 30F60AB3 30F60AB3 Package TO-3PB Packaging Tube Device Weight 5.2g(typ) :201510C 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Average forward TBCB=100℃ (TO-3PB) current per device Symbol VRRM IF(AV) per diode Peak one Cycle Surge Forward IFSM Current(Non-Repetitive) t=10ms Junction Temperature Storage temperature range Tj TSTG 30F60AB3 Value 600 Unit V 30 A 15 150 A -50~+150 ℃ -50~+150 ℃ ELECTRICAL CHAR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30F60AB |
JILIN SINO |
FAST RECOVER DIODE | |
2 | 30F60HF |
JILIN SINO |
FAST RECOVER DIODE | |
3 | 30F60UA3 |
JILIN SINO |
FAST RECOVER DIODE | |
4 | 30F60W |
JILIN SINO |
FAST RECOVERY DIODE | |
5 | 30F-21 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
6 | 30F-22 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
7 | 30F-25 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
8 | 30F-26 |
Yuan Dean Scientific |
10/100/1000 BASE-T MAGANETIC | |
9 | 30F120WT |
JILIN SINO |
FAST RECOVER DIODE | |
10 | 30F2010 |
Microchip Technology |
16-Bit Digital Signal Controllers | |
11 | 30F2011 |
Microchip Technology |
DSPIC30F2011 | |
12 | 30F40UW3 |
JILIN SINO |
FAST RECOVERY DIODE |