2SK3843 - Toshiba Semiconductor

2SK3843 N-Channel MOSFET

2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 2.7 mΩ (typ.) : |Yfs| = 120 S (typ.) Unit: mm z Low leakage current : IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode : Vt.

Features

esistance, channel to case Symbol Rth (ch
  –c) Max 1.0 Unit °C/W 1 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, IAR = 75 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2006-09-27 2SK3843 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain
  –source breakdown voltage Gate threshold voltage Drain
  –source ON resistance Forward transfer admittance www.Da.