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2SK3843 |
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| Part Number | 2SK3843 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward... |
| Features |
esistance, channel to case Symbol Rth (ch –c) Max 1.0 Unit °C/W 1 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, IAR = 75 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2006-09-27 2SK3843 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain –source breakdown voltage Gate threshold voltage Drain –source ON resistance Forward transfer admittance www.Da... |
| Document |
 2SK3843 Data Sheet
PDF 213.13KB |
| Distributor | Stock | Price | Buy |
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