2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 36 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vt.
o case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 4.17 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH, RG = 25 Ω, IAR = 32 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.5 g (typ.) 1 2006-09-27 2SK3847 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3842 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK3843 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3844 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK3845 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3846 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK3800 |
Sanken |
MOSFET | |
7 | 2SK3800 |
INCHANGE |
N-Channel MOSFET | |
8 | 2SK3801 |
Sanken |
MOSFET | |
9 | 2SK3801 |
INCHANGE |
N-Channel MOSFET | |
10 | 2SK3803 |
Sanken |
MOSFET | |
11 | 2SK3804-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
12 | 2SK3804-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |