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2SK3651-01R |
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| Part Number | 2SK3651-01R |
| Manufacturer | Fuji Electric |
| Description | www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER ... |
| Features |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 200 V 220 A Continuous drain current ±25 A Pulsed drain current ±100 V Gate-source voltage ±30 A Non-repetitive Avalanche current 25 mJ Maximum Avalanche Energy 372 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max. power dissip... |
| Document |
 2SK3651-01R Data Sheet
PDF 136.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK3651-01R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK365 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK3650-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK3650-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK3650-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|