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SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features 4.5-V drive available Low on-state resistance +0.2 8.7-0.2 RDS(on)1 = 14 m Low gate charge MAX. (VGS = 10 V, ID = 20 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V) Built-in g.
4.5-V drive available Low on-state resistance
+0.2 8.7-0.2
RDS(on)1 = 14 m Low gate charge
MAX. (VGS = 10 V, ID = 20 A)
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature
* PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID I.
2SK3404 - NEC
The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK3402 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |
|
| 2 | 2SK3402 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor |
|
| 3 | 2SK3403 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK3405 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |
|
| 5 | 2SK3405 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor |
|
| 6 | 2SK3407 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SK3408 |
NEC |
N-Channel MOSFET |
|
| 8 | 2SK34 |
ETC |
Transistor |
|
| 9 | 2SK3411 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 10 | 2SK3412 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 11 | 2SK3413LS |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 12 | 2SK3414LS |
Sanyo Semicon Device |
N-Channel MOSFET |
|