Ordering number : ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features • • Package Dimensions unit : mm 2078C [2SK3414LS] 10.0 3.2 4.5 2.8 Low ON-resistance. 4V drive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage .
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Package Dimensions
unit : mm 2078C
[2SK3414LS]
10.0 3.2 4.5 2.8
Low ON-resistance. 4V drive.
3.5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
0.75 1 2 3
14.0
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 60 ±20 30 120 2.0 25 150 --55 to +150 Unit V V A A W W °C °C
Electrical .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3411 |
Sanyo Semicon Device |
N-Channel MOSFET | |
2 | 2SK3412 |
Sanyo Semicon Device |
N-Channel MOSFET | |
3 | 2SK3413LS |
Sanyo Semicon Device |
N-Channel MOSFET | |
4 | 2SK3415LS |
Sanyo Semicon Device |
N-Channel MOSFET | |
5 | 2SK3416 |
Sanyo Semicon Device |
N-Channl Silicon MOSFET | |
6 | 2SK3417 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK3418 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
8 | 2SK3418 |
Renesas |
Silicon N-Channel MOSFET | |
9 | 2SK3419 |
Renesas |
Silicon N Channel MOS FET | |
10 | 2SK34 |
ETC |
Transistor | |
11 | 2SK3402 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
12 | 2SK3402 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor |