The 2SK3408 is a switching device which can be driven directly by a 4-V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 .
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1
–0.05 0.16+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1 2
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A) RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3402 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
2 | 2SK3402 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor | |
3 | 2SK3403 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK3404 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
5 | 2SK3404 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor | |
6 | 2SK3405 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | 2SK3405 |
Guangdong Kexin Industrial |
MOS Field Effect Transistor | |
8 | 2SK3407 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK34 |
ETC |
Transistor | |
10 | 2SK3411 |
Sanyo Semicon Device |
N-Channel MOSFET | |
11 | 2SK3412 |
Sanyo Semicon Device |
N-Channel MOSFET | |
12 | 2SK3413LS |
Sanyo Semicon Device |
N-Channel MOSFET |