2SK3299 - Guangdong Kexin Industrial

2SK3299 MOSFET

www.DataSheet4U.com SMD Type MOS Field Effect Transistor 2SK3299 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratin.

Features

Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratings Surface mount package available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Gate voltage rating 30 V +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature
* PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS I.