2SK3290 - Hitachi Semiconductor

2SK3290 N-Channel MOSFET

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta .

Features

• Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)
• 4 V gate drive device.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 500 2 500 400 150
  –55 to +150 Unit V V mA A mA mW °C °C 1. PW ≤ 10 µ.