Ordering number:ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SK3292] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Vol.
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm 2062A
[2SK3292]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings 60 ±20 2 8 1.5 3.5 150 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3290 |
Hitachi Semiconductor |
N-Channel MOSFET | |
2 | 2SK3291 |
Sanyo Semicon Device |
N-Channel MOSFET | |
3 | 2SK3293 |
Sanyo Semicon Device |
N-Channel MOSFET | |
4 | 2SK3294 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
5 | 2SK3294 |
Guangdong Kexin Industrial |
MOSFET | |
6 | 2SK3295 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | 2SK3295 |
Guangdong Kexin Industrial |
MOSFET | |
8 | 2SK3296 |
NEC |
MOSFET | |
9 | 2SK3296 |
Guangdong Kexin Industrial |
MOSFET | |
10 | 2SK3297 |
NEC |
MOSFET | |
11 | 2SK3298 |
NEC |
N-Channel MOSFET | |
12 | 2SK3299 |
NEC |
N-Channel MOSFET |