The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. • ORDERING INFORMATION PART NUMBER 2SK3204 PACKAGE MP-10 • FEATURES • Low on-state resistance : RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A) • Low Ciss : Ciss = 940 pF (TYP.) • Built-in gate protection diod.
• Low on-state resistance : RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A)
• Low Ciss : Ciss = 940 pF (TYP.)
• Built-in gate protection diode.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT Tch Tstg
Note2 Note2
60 ±20 +20, −10 ±15 ±45 1.8 150 −55 to +150 15 22.5
V V V A A W °C °C A mJ
Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature
•
•
Single Avalanche Current Sing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK320 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK320 |
Hitachi Semiconductor |
(2SK319 / 2SK320) SILICON N-CHANNEL MOS FET | |
3 | 2SK320 |
Hitachi Semiconductor |
(2SK319 / 2SK320) SILICON N-CHANNEL MOS FET | |
4 | 2SK3205 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3207 |
Hitachi Semiconductor |
N-Channel MOSFET | |
6 | 2SK3209 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK3209 |
Renesas |
Silicon N Channel MOS FET | |
8 | 2SK321 |
Panasonic Semiconductor |
N-Channel MOSFET | |
9 | 2SK3211 |
Hitachi Semiconductor |
N-Channel MOSFET | |
10 | 2SK3211 |
Renesas |
Silicon N Channel MOS FET | |
11 | 2SK3211L |
Hitachi Semiconductor |
N-Channel MOSFET | |
12 | 2SK3211L |
Renesas |
Silicon N Channel MOS FET |