·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissipation@TC=25℃ 50 W .
akage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 VSD Diode Forward Voltage IF= 3A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=15V;ID=2A;RL=15Ω toff Turn-off time MIN TYP MAX UNIT 450 V 1.0 5.0 V 1.10 1.83 ±1 Ω uA 1 mA 0.85 V 35 ns 50 ns 35 ns 120 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3204 |
NEC |
N-Channel MOSFET | |
2 | 2SK3205 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3207 |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SK3209 |
Hitachi Semiconductor |
N-Channel MOSFET | |
5 | 2SK3209 |
Renesas |
Silicon N Channel MOS FET | |
6 | 2SK321 |
Panasonic Semiconductor |
N-Channel MOSFET | |
7 | 2SK3211 |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SK3211 |
Renesas |
Silicon N Channel MOS FET | |
9 | 2SK3211L |
Hitachi Semiconductor |
N-Channel MOSFET | |
10 | 2SK3211L |
Renesas |
Silicon N Channel MOS FET | |
11 | 2SK3211S |
Hitachi Semiconductor |
N-Channel MOSFET | |
12 | 2SK3211S |
Renesas |
Silicon N Channel MOS FET |