2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings .
•
•
• Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)
*1 IDR IAP
*
3 3 2
Ratings 200 ±20 25 100 25 25 41 100 150
–55 to +150
Unit V V A A A A mJ W °C °C
EA.
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3211 |
Hitachi Semiconductor |
N-Channel MOSFET | |
2 | 2SK3211 |
Renesas |
Silicon N Channel MOS FET | |
3 | 2SK3211S |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SK3211S |
Renesas |
Silicon N Channel MOS FET | |
5 | 2SK321 |
Panasonic Semiconductor |
N-Channel MOSFET | |
6 | 2SK3212 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK3212 |
Renesas |
Silicon N Channel MOS FET | |
8 | 2SK3214 |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SK3215 |
Hitachi Semiconductor |
N-Channel MOSFET | |
10 | 2SK3216-01 |
Fuji Electric |
N-Channel MOSFET | |
11 | 2SK3217-01MR |
Fuji |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK3218 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |