Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications q Contactless relay q Diving circuit for a solenoid q Dri.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1 2.3±0.1 4.6±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK303 |
Sanyo Semicon Device |
N-Channel MOSFET | |
2 | 2SK303 |
UTC |
JFET | |
3 | 2SK303 |
Kexin |
N-Channel FET | |
4 | 2SK3030 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
5 | 2SK3031 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
6 | 2SK3032 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
7 | 2SK3033 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
8 | 2SK3034 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
9 | 2SK3035 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
10 | 2SK3037 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
11 | 2SK300 |
Sony Corporation |
N-Channel Silicon MOSFET | |
12 | 2SK3000 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |