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Power F-MOS FETs 2SK3031 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switchi.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
7.3±0.1 1.8±0.1
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
s Applications
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK303 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 2 | 2SK303 |
UTC |
JFET |
|
| 3 | 2SK303 |
Kexin |
N-Channel FET |
|
| 4 | 2SK3030 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 5 | 2SK3032 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 6 | 2SK3033 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 7 | 2SK3034 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 8 | 2SK3035 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 9 | 2SK3036 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 10 | 2SK3037 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
|
| 11 | 2SK300 |
Sony Corporation |
N-Channel Silicon MOSFET |
|
| 12 | 2SK3000 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|