Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving c.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7
–0.2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.3
3.0±0.2
s Applications
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain cu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK303 |
Sanyo Semicon Device |
N-Channel MOSFET | |
2 | 2SK303 |
UTC |
JFET | |
3 | 2SK303 |
Kexin |
N-Channel FET | |
4 | 2SK3030 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
5 | 2SK3031 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
6 | 2SK3032 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
7 | 2SK3033 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
8 | 2SK3035 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
9 | 2SK3036 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
10 | 2SK3037 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET | |
11 | 2SK300 |
Sony Corporation |
N-Channel Silicon MOSFET | |
12 | 2SK3000 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |