2SK2992 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2992 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 2.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode :.
: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Therma.
SMD Type N-Channel MOSFET 2SK2992 MOSFET ■ Features ● VDS (V) = 200V ● ID = 1 A (VGS = 10V) ● RDS(ON) < 3.5Ω (VGS = 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2991 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2993 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2995 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK2996 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2996 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK2998 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
7 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
9 | 2SK2901-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
10 | 2SK2902-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
11 | 2SK2903-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK2904-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |