2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2993 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 82 mΩ (typ.) : |Yfs| = 20 S (typ.) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) l Enhancement−mode : Vth = .
case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.5 g (typ.) 1 2002-01-25 http://www.Datasheet4U.com 2SK2993 Electrical Characteristics (Ta = 25°C) Characteristics S .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2991 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2992 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
3 | 2SK2992 |
Kexin |
N-Channel MOSFET | |
4 | 2SK2995 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2996 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2996 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK2998 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
8 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
10 | 2SK2901-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
11 | 2SK2902-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK2903-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |