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2SK2992 |
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| Part Number | 2SK2992 |
| Manufacturer | Kexin |
| Description | SMD Type N-Channel MOSFET 2SK2992 MOSFET ■ Features ● VDS (V) = 200V ● ID = 1 A (VGS = 10V) ● RDS(ON) ＜ 3.5Ω (VGS = 10V) ● High Forward Transfer Amdittance ● Low Leakage Current 1.70 0.1 0.42 0.1... |
| Features |
● VDS (V) = 200V ● ID = 1 A (VGS = 10V) ● RDS(ON) ＜ 3.5Ω (VGS = 10V) ● High Forward Transfer Amdittance ● Low Leakage Current 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=20KΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Repetitive Avalanche Energy Single Pulse Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID IDM IAR PD EAR EAS RthJA TJ Tstg Rating 2... |
| Document |
 2SK2992 Data Sheet
PDF 1.33MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2991 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2992 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 3 | 2SK2993 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK2995 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SK2996 |
Toshiba Semiconductor |
N-Channel MOSFET |
|