2SK2796 - Hitachi Semiconductor

2SK2796 Silicon N Channel MOS FET

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) I.

Features

• Low on-resistance R DS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.14 20 150
  –55 to +150 Unit V V A A A A mJ W °C °.