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Transistors Switching (500V, 5A) 2SK2793 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackagi.
1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 162 Transistors FElectrical characteristics (Ta = 25_C) 2SK2793 FElectrical characteristic curves 163 Transistors 2SK2793 164 Transistors 2SK2793 FSwitching characteristics Fmeasurement circuit 165 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2792 |
Rohm |
Switching Transistor |
|
| 2 | 2SK2796 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2796L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2796L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 2SK2796S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 6 | 2SK2798 |
Shindengen Electric Mfg.Co.Ltd |
VX-2 Series Power MOSFET |
|
| 7 | 2SK2799 |
Shindengen Electric Mfg.Co.Ltd |
VX-2 Series Power MOSFET |
|
| 8 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor |
|
| 9 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2701 |
Sanken electric |
MOSFET |
|
| 11 | 2SK2701A |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK2702 |
Sanken electric |
MOSFET |
|