2SK2745 - Toshiba Semiconductor

2SK2745 N-Channel MOSFET

2SK2745 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2745 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 7.0 mΩ (typ.) l High forward transfer admittance : |Yfs| = 50 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 50 V) l.

Features

yp.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 0.833 50 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 368 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-27 Electrical Characteristics (Ta = 25°C) 2SK2745 Characteristics Symbol T.