2SK2741 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2741 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.12 Ω (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 µA (max.
sistance, channel to ambient Symbol Rth (ch−a) Max 50 Unit °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 Ω, IAR = 5 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-25 2SK2741 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2740 |
Rohm |
Switching Transistors | |
2 | 2SK2742 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2744 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK2745 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2746 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2749 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2701 |
Sanken electric |
MOSFET | |
10 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2702 |
Sanken electric |
MOSFET | |
12 | 2SK2703 |
Sanken electric |
MOSFET |