2SK2736 - Hitachi Semiconductor

2SK2736 Silicon N-Channel MOSFET

2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s.

Features

• Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
• 4V gate drive devices.
• High speed switching Outline TO
  –220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 30 ±20 30 120 30 25 150
  –55 to +150 Unit V V A A A W °C °C 2 2SK.