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2SK2734 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. ADE-208-520 (Z) 1st. Edition Jun 1997 D G S 32 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Symbol .
• Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = 5 A
Outline
TO-92MOD.
ADE-208-520 (Z) 1st. Edition Jun 1997
D G
S
32 1
1. Source 2. Drain 3. Gate
2SK2734
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS ID I
*1
D(pulse)
I DR Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Ratings
Unit
30
V
±20
V
5
A
20
.
2SK2734 - Hitachi Semiconductor
2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS.
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|---|---|---|---|---|
| 1 | 2SK2730 |
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| 2 | 2SK2730 |
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| 3 | 2SK2731 |
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| 4 | 2SK2731 |
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| 5 | 2SK2733 |
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| 6 | 2SK2735 |
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| 7 | 2SK2735L |
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| 8 | 2SK2735S |
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| 9 | 2SK2736 |
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| 10 | 2SK2736 |
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| 11 | 2SK2737 |
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| 12 | 2SK2737 |
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