2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = .
• Low on-resistance R DS = 20 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
DPAK
–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 30 ±20 20 80 20 20 150
–55 to +15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2735 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2735S |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
3 | 2SK2730 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2730 |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK2731 |
Rohm |
Transistor | |
6 | 2SK2731 |
Kexin |
N-Channel MOSFET | |
7 | 2SK2733 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
8 | 2SK2734 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2Sk2734 |
Renesas |
Silicon N-Channel MOSFET | |
10 | 2SK2736 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK2736 |
Renesas |
Silicon N-Channel MOSFET | |
12 | 2SK2737 |
Hitachi Semiconductor |
N-Channel MOSFET |