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2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), u.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 50 200 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2516-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2510 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
| 3 | 2SK2511 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
| 4 | 2SK2512 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
| 5 | 2SK2514 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
| 6 | 2SK2515 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
| 7 | 2SK2517-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK2517-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 9 | 2SK2518-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 10 | 2SK2519-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK2503 |
Rohm |
Small switching Transistors |
|
| 12 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |
|