2SK2511 - NEC

2SK2511 SWITCHING N-CHANNEL POWER MOS FET

The 2SK2511 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 FEATURES • Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0 • Low Ciss Ciss = 1 210 pF TYP. • Built-in .

Features

• Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0
• Low Ciss Ciss = 1 210 pF TYP.
• Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature
* PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg 60 ± 20 ± 40 ± 160 80 3.0 150 V V A A W W ˚C 1 19 MIN. 3.0±0.2 2.