The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) • Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 23 mΩ (VGS = 4 V, ID = 25 A) 1.0 FEATURES .
15.7 MAX. 4
3.2±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature
* PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg 60 ± 20 ± 50 ± 200 150 3.0 150 V V A A W W ˚C
19 MIN. 3.0±0.2
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode
20.0±0.2 6.0 1
2
3
2.2±0.2 5.45
MP-88
Drain
–55 to +150 ˚C
Body Diode Gate Gate Protection Diode Source
Document No. D10296.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2510 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
2 | 2SK2511 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
3 | 2SK2512 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
4 | 2SK2515 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
5 | 2SK2516-01L |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2516-01S |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2517-01L |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2517-01S |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2518-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2519-01 |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2503 |
Rohm |
Small switching Transistors | |
12 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |