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2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2398 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.5~3.0 V (VDS.
stics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.25 50 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-07-22 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain cut−off c.
2SK2398 - Inchange Semiconductor
·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2390 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK2391 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK2393 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2393 |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2394 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 6 | 2SK2394 |
ON Semiconductor |
N-Channel JFET |
|
| 7 | 2SK2395 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 8 | 2SK2396 |
Renesas |
Silicon Power MOSFET |
|
| 9 | 2SK2396A |
Renesas |
Silicon Power MOSFET |
|
| 10 | 2SK2397-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK2399 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|