2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2399 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.17 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) .
eristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.25 125 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-07-22 Electrical Characteristics (Ta = 25°C) 2SK2399 Char.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2390 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK2391 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2393 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2393 |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | 2SK2394 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
6 | 2SK2394 |
ON Semiconductor |
N-Channel JFET | |
7 | 2SK2395 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
8 | 2SK2396 |
Renesas |
Silicon Power MOSFET | |
9 | 2SK2396A |
Renesas |
Silicon Power MOSFET | |
10 | 2SK2397-01MR |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2398 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2398 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |